电离辐射诱导HeLaS_3细胞凋亡时程变化的影响

INFLUENCES ON TIME COURSE OF APOPTOSIS OF HeLaS_3 CELLS AFTER IRRADIATION WITH DIFFERENT DOSES X RAYS

采用PI和Hoechst33342双染、流式细胞术 (FCM)和图像分析术 (ICM)检测了不同剂量电离辐射对HeLaS3 细胞凋亡的影响。结果表明 ,HeLaS3 细胞在分别受到 0 .5 - 4 .0GyX射线照射后 8h ,其细胞凋亡呈增高趋势 ,但无统计学意义。照射后 12h ,细胞凋亡显著增加 (p <0 .0 1) ,并达峰值。随后 ,细胞凋亡率迅速下降 ,4 8h ,又有所回升。且流式细胞术与图像分析术所得结果数据相近 ,趋势一致。

Changes of time course in apoptosis of HeLaS 3 cells following irradiation with different doses X rays were observed. The percentages of apoptotic cells were examined by both flow cytometry (FCM) and image cytometry (ICM) after the cells were stained by propidium iodine (PI) and Hoechst33342 (HO). It was founded that the percentages of apoptotic cells increased after irradiation with 0.5-4.0Gy X rays and the peak value emerged at the 12th hour after irradiation .In additon the values examined by both FCM and ICM were nearly same and the tendency was identical. So irradiation may induce apoptosis of HeLaS 3 cell lines.