GaAs/AlGaAs量子阱红外探测器特性非对称性分析

ASYMMETRY IN THE CHARACTERISTIC OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR

在分子束外延生长量子阱材料过程中 ,分析了在不同的 Ga As/ Al Ga As异质结生长次序中 Ga的解吸附速率不同和量子阱中掺杂的扩散造成量子阱结构的不对称 ,讨论了 Ga As/ Al Ga As量子阱红外探测器的性能参数相对于正负偏压的不对称性 ,并与金属有机化合物汽相沉淀法生长的量子阱材料和相应器件进行了比较 .发现 。

The asymmetry in the characteristic of GaAs/AlGaAs quantum well infrared photodetector (QWIP) due to different Ga desorption rate upon opening/closing the Al shutter and different diffusion of Si doping in the quantum well during MBE growth was analyzed, and that in the parameters of GaAs/AlGaAs QWIP versus bias was discussed and compared with the materials and devices grown by MOVCD method. It was found that the asymmetry of QWIP grown by MBE is higher than that of QWIP grown by MOCVD.