摘要
本文通过分析器件内部电流传输探讨了光电双基区晶体管 (PDUBAT)负阻特性产生机理 ,首次提出了PDUBAT负阻形成的原因是其输出管横向输出电流的反馈作用 。
Through analyzing the internal current transport in photoelectric dual-base transistor (PDUBAT), the physical mechanism for the origin of the negative resistance characteristic in the device is discussed. We propose that the cause for the negative resistance in PDUBAT is coming from the feedback effect of the lateral component of output of the vertical transistor in PDUBAT for the first time. This viewpoint is confirmed by experiment.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2001年第8期1123-1125,共3页
Acta Electronica Sinica
基金
天津市自然科学基金资助项目 (No 98360 1 4 1 1 )
关键词
光电双基区晶体管
间接耦合光电探测器
物理模型
Detectors
Electric currents
Equivalent circuits
Feedback
Photoelectric devices
Semiconductor device models
