含N超薄栅氧化层的击穿特性

Breakdown Characteristics of Nitride Ultra-Thin Gate Oxide

研究了含 N超薄栅氧化层的击穿特性 .含 N薄栅氧化层是先进行 90 0℃干氧氧化 5 m in,再把 Si O2 栅介质放入 10 0 0℃的 N2 O中退火 2 0 min而获得的 ,栅氧化层厚度为 10 nm.实验结果表明 ,在栅介质中引入适量的 N可以明显地起到抑制栅介质击穿的作用 .分析研究表明 ,N具有补偿 Si O2 中 O3≡ Si·和 Si3≡ Si·等由工艺引入的氧化物陷阱和界面陷阱的作用 ,从而可以减少初始固定正电荷和 Si/ Si O2 界面态 。

The breakdown characteristics of N 2O nitride ultra thin gate oxide are investigated.The experimental data show that with N introduced into thermal SiO 2 oxide,the breakdown characteristics of thin gate oxide are much improved.The characteristics of ultra thin gate oxide can also be improved by N,because N can decrease the oxide charges and interface states induced during the process.