栅控二极管R—G电流法表征SOI—MOS器件埋氧层界面陷阱的敏感性分析

Sensitivity Analysis of the Back Interface Trap-Induced R-G Current Obtained by a Lateral SOI Forward Gated-Diode

通过数值模拟手段，用归一化的方法研究了界面陷阱、硅膜厚度和沟道掺杂浓度对R－G电流大小的影响规律。结果表明：无论在FD还是在PD SOI MOS器件中，界面陷阱密度是决定R－G电流峰值的主要因素，硅膜厚度和沟道掺杂浓度的影响却因器件的类型而导。为了精确地用R－G电流峰值确定界面陷阱的大小，器件参数的影响也必须包括在模型之中。

The sensitivity analysis of the back interface trap induced Recombination Generation (R G) current of the lateral SOI forward gated diode is discussed.The dependence of the R G current sensitivity on the back interface traps is examined in the normalized form and the effects of some key factors such as the silicon film thickness and channel doping concentration are demonstrated.The results show the R G current is heavily dependent on the interface trap density.The effects on the R G current magnitude of the channel doping concentration and the silicon film thickness of the SOI devices must also be considered in order to accurately model the interface traps via the R G current peak.