倒扣芯片连接底充胶分层和焊点失效

Underfill Delamination and Solder Joint Failure of Flip Chip on Board

在热循环疲劳加载条件下 ,使用 C- SAM高频超声显微镜测得了 B型和 D型两种倒扣芯片连接在焊点有无断裂时芯片 /底充胶界面的分层和扩展 ,得到分层裂缝扩展速率 .同时在有限元模拟中使用断裂力学方法计算得到不同情况下的裂缝顶端附近的能量释放率 .最后由实验裂缝扩展速率和有限元模拟给出的能量释放率得到可作为倒扣芯片连接可靠性设计依据的

The delamination propagation behavior at the interface between the chip and the underfill is investigated and the crack propagation rates are measured via C SAM inspection for two types (B & D) of flip chip packages under thermal cycle loading.Meanwhile,in the related simulations of the element,the strain energy releasing rates near the crack tip under different conditions can be calculated by employing the fracture mechanical method.Then,the Paris half empirical equation,used as design criteria of flip chip package reliability,is determined with the crack propagation rates and the energy release rates obtained.