期刊文献+

基于缺陷统计分布的IC互连线可靠性模型 被引量:1

Reliability Model of IC Interconnect Based on Defect Distribution Statistics
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摘要 讨论了电路在直流和脉冲直流工作情况下互连线的寿命 ,并重点考虑了工艺缺陷软故障的影响 ,提出了新的互连线寿命估计模型 .利用该模型可以估算出在考虑缺陷的影响时互连线的寿命变化情况 ,这对 IC电路设计有一定的指导作用 . Taking process defects into account,the device lifetime under dc and pulse dc stresses are discussed.Based on the analysis,a new model of interconnect lifetime is presented to estimate the variation in the interconnect lifetime when considering the defects,which is helpful to the IC design.The simulation results prove the model valid.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第10期1343-1345,共3页 半导体学报(英文版)
基金 国家"九五"科技攻关 ( 96 -738) 国防科技预研基金( 99J8.3.3.DZ0 134)资助项目~~
关键词 可靠性 缺陷统计分布 互连线寿命 集成电路 reliability defect interconnect lifetime IC design
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参考文献5

  • 1Jiang Xiaohong,IEEE Trans Semiconductor Manufacturing,1998年,11卷,3期,432—441页
  • 2Hao Yue,半导体学报,1996年,17卷,9期,677—682页
  • 3Hao Yue,Theory Method IC Manufacturing Dynamics,1995年
  • 4Jiang Tao,IEEE Electron Device Lett,1993年,14卷,554—556页
  • 5Jiang Tao,IEEE Trans Electron Devices,1993年,41卷,4期,539—545页

同被引文献8

  • 1Quyang C H,Pleskacz W A,Maly W.Extraction of criticalareas for opens in large VLSI circuits.IEEE International Workshop on Defect and Fault Tolerance in VLSI System,1996,21
  • 2Maly W,Strojwas A J,Director S W.Fabrication based statistical design of monolithic IC's.In:Proceeding of the IEEE International Symposium on Circuits and Systems,1981,135
  • 3Jiang Tao,Cheung N W,Hu Chenming.An electromigration failure model for interconnects under pulse and bidirectional current string.IEEE Trans Electron Devices,1993,41(4):539
  • 4Jiang Tao,Cheung N W,Hu Chenming.Metal electromi-gration damage healing under bidirectional current stress.IEEE Electron Deviece Lett,1993,14:554
  • 5Allan G A,Walton A J.Critical area extration of soft fault estimation.IEEE Trans Semicond Manuf,1998,11(1):146
  • 6Pleskacz W A,Quyang C H,Maly W.A DRC-based algo-rithm for extraction of critical areas for opens in large VLSI circuits.IEEE Trans Comput-Aided Des Integrated Circuits and Systems,1999,18(2):151
  • 7马佩军,郝跃,寇芸.一种改进的VLSI关键面积计算模型和方法[J].Journal of Semiconductors,2001,22(9):1212-1216. 被引量:2
  • 8赵天绪,郝跃,陈太峰,马佩军.基于离散模型的IC可靠性与成品率关系[J].电子学报,2001,29(11):1515-1518. 被引量:1

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