弱磁场对SnO_2薄膜性能的影响

Effect of the magnetic mirror field on the deposition of SnO_2 thin film

利用等离子体增强化学气相沉积 (PECVD)技术制备了SnO2 薄膜。实验中通过改变磁镜场的磁镜比和磁场大小 ,研究了弱磁场对SnO2 薄膜方块电阻及电阻分布的影响。实验结果表明 ,随着磁镜比和磁场强度的增加 ,SnO2 薄膜的方块电阻在降低 ,且电阻分布变得比较均匀 ;但是 ,当磁镜比超过 5 .5时 ,SnO2 薄膜的电阻分布却变得越来越不均匀。

The SnO2 thin films are prepared by a plasma enhanced chemical vapor deposition (PECVD) method. The effect of magnetic mirror field on the electric properties of SnO2 thin films is investigated. The experimental results show that the square resistance of SnO2 thin films decreases, and the axial distribution of the square resistance of thin films becomes more uniform, with the increase of the magnetic mirror ratio and the magnetic field intensity. However when the magnetic mirror ratio exceeds 5.5, the axial distribution of the resistance of SnO2 thin films become non-uniform.