Sol-Gel法制备低阻In_2O_3薄膜

Preparation of low resistance In_2O_3 thin film by sol-gel method

采用sol gel法制备In2 O3薄膜材料 ,研究了不同制备条件对薄膜电阻的影响 ;分别用XPS、XRD方法对材料进行了分析 ,确定了其结构和组成 ,并用此薄膜材料制作了直热式气敏元件 ,发现它对乙醇、丁烷气体具有较高的灵敏度。

In 2O 3 thin film is prepared by sol gel technology. We analyzed the relation between the prepared conditions and the resistance of the thin film. The thin film was researched by XPS,XRD, so we got the structure and composition of the thin film, and direct heat gas sensor was fabricated with this thin film. It has good sensitivity to C 2H 2OH.