纳米级PtSi/P-Si(100)薄膜形成工艺研究

Technological study on formation of nanometre-lever PtSi/P-Si(100) film

用XRD、XPS、TEM分析手段研究了在P Si( 10 0 )上溅射的Pt膜 ,经不同工艺形成PtSi薄膜的物相及连续性。通过分析硅衬底预处理以及退火条件、气氛等对成膜质量的影响 ,找到形成超薄PtSi膜的工艺方法 ,制备出 4nm连续薄膜。

The phase and continuity of PtSi film formed by sputter deposited Pt film on Si(100) and annealed at different condition are studied by XRD, XPS, and TEM. The film quality dependence of pre deal for substrates and annealing condition is discussed. A new approach for formation of ultra thin PtSi films is given, and continued PtSi film with thickness 4nm is obtained.