铝诱导非晶硅薄膜低温晶化及结构研究

Study on aluminum induced crystallization of amorphous silicon thin films at low temperature and their structure

介绍了一种非晶硅薄膜低温晶化的新工艺———金属诱导非晶硅薄膜低温晶化。在非晶硅膜上蒸镀金属铝薄膜 ,而后于氮气保护中退火 ,实现了非晶硅薄膜的低温 ( <60 0℃ )晶化。利用X射线衍射、光学显微镜及透射电镜等测试方法 ,研究了不同退火工艺对非晶硅薄膜低温晶化的影响 ,确定了所制备的是多晶硅薄膜。

A new process was developed for low-temperature crystallization of amorphous silicon films, by metal induced crystallization of amorphous silicon films at low temperature. Aluminum thin films were evaporated on the top of amorphous silicon thin films and subsequently annealed in N2 atmosphere. Using this method can make amorphous silicon films crystallization at low temperature (<600°C). We studied the influence of different annealing process on the low temperature crystallization of amorphous silicon films, testified that the thin films were polycrystalline silicon films by X-ray diffraction, optical micrographs and the transmissive electron microscope.