金刚石薄膜界面状态及其生长过程的研究

Interfacial State and Growth Process of Diamond Films

本文以Si(100)为衬底,利用电子增强式化学汽相沉积方法生长的金刚石膜为试样,用透射电镜(Cross-seotion制样)和扫描电镜观测了金刚石薄膜界面状态及其生长过程。研究表明:界面是一种非晶态的碳的过渡层,其衍射晕环的中心所对应的面间距与金刚石相近。界面的边缘或平整或凹凸不平,参差不齐,宽度在0.2-0.8μm之间。界面上所生长的金刚石薄膜由胚芽层和晶粒层组成;胚芽层有三种形态;同一试样上的不同部位或不同试样上的界面状态及生长过程是不同的。

In this paper the state of interface and growth process of diamond film grown on Si(100) by EACVD were observed and studied by Transmission electron microscopy (TEM) and Scanning election mieroscopy (SEM). It shows that the interface is an interfacial layer of amorphous carbon and interplanar spacings corresponding with the center of diffraction ring is irregular and the width of interfacial layer is not unifom from 0.2μm to 0.8μm.The diamond film grown on the interface consists of primary nucleus laver and crystalline grainThe interface state as well as growth process of diamond at different regions on a sample or different samples is not same.