摘要
用X射线荧光光谱法测定了提拉法生长的Mg_2Si_4O:Cr单晶体中铬的分凝系数为0.15。分析了实际计算值和理论值之间存在偏差的原因。提出了生长高质量的Mg_2SiO_4:Cr晶体的方法。
Distribution coefficient of Cr in Mg_2SiO_4:Cr crystal by Czochralski method is determined to be 0.15 by X-ray fluorescence spectrum. Analysis the error between the calculated value and the experimental value, The methods to grow quality crystal are introduced.
出处
《人工晶体学报》
EI
CAS
CSCD
1991年第2期174-178,共5页
Journal of Synthetic Crystals
基金
上海市科委青年科学基金
关键词
Mg2SiO4:Cr
铬
晶体
提拉法
激光
distribution coefficient, Czochralski method, Mg_2SiO_4: Cr, laser crystal
