ICP-AES法测定硅铁中痕量元素

Determination of trace elements in ferrosilicon by inductively coupled plasma atomic emission spectrometry

采用电感耦合等离子原子发射光谱法测定硅铁中的痕量元素 ,研究了Fe基体对被测元素的影响 ,并选择了最佳工作条件。被测元素的检测限为 0 .60～ 76.2 ng/m L,样品加标回收率为 92 %～ 1 0 8% ,RSD( n=8) <3%

Direct determination of trace elements in ferrosilicon by inductively coupled plasma atomic emission spectrometry was described. Optimum condition and matrix interference were studied. The detection limits for various elements were in the range of 0 60～76 2 ng/mL with recovery of 92%～108% and RSD of less than 3%.