集成电路片内铜互连技术的发展

State-of-the-Art of the On-Chip Copper Interconnect Technology for ULSI's

论述了铜互连取代铝互连的主要考虑 ,介绍了铜及其合金的淀积、铜图形化方法、以及铜与低介电常数材料的集成等。综述了 ULSI片内铜互连技术的发展现状。

The reason for replacement of Al interconnect with its Cu counterpart is elaborated.The deposition of copper and its alloys, copper patterning, and the integration of low k material into Cu interconnect are described.The state of the art of the on chip Cu interconnect for ULSI's and its development are summarized in this paper.