YBCO外延薄膜的afterglow plasma溅射生长

YBCO thin film growth by afterglow pl asma sputtering

Y1Ba2Cu3O7-δ(YBCO)高温超导薄膜溅射生长所遇到的主要问题是负氧离子的反溅射效应。采用afterglowplasma溅射生长YBCO薄膜,有效地抑制了负氧离子的反溅射效应,从而生长出了超导性质优异的YBCO单晶薄膜,薄膜的临界电流密度JC(77K,0T)=7.6×106A/cm2,薄膜的微波表面电阻Rs(77K,10GHz)=206μΩ,薄膜(005)峰摇摆曲线半高宽(FWHM)为0.120。

The key problem encountered in YBCO thin film growth by sputtering is the negative ions bombarding the growing films.To min imize the negative ions bombardment effect ,YBCO thin film growth was experimented by afterglo w plasma process.Single crystal YBCO thin films with excellent superconducting transition properties were prepared by afterglow plasma sputtering.The current density of the films at 77K is 7.6×106A /cm2for 1μV.The microwave surface resistance of the films at(77K,10GHz )is 206μΩ.The full width at half maximum(FWHM)value of the rocking curve around(005)diffraction peak,which is 0.12 o,is obtained.