低剂量SIMOX圆片线缺陷和针孔的研究

Investigation of threading disloca tion and pinhole density in low dose SIMOX wafers

用Secco法、Cu-plating法分别表征了低剂量SIMOX圆片顶层硅线缺陷、埋层的针孔密度。结果显示,低剂量SIMOX圆片的顶层硅缺陷密度低,但埋层质量稍差。通过注入工艺和退火过程的进一步优化,低剂量SIMOX将是一种有前途的SOI材料制备工艺。

SIMOX -SOI wafers were fabricated a t low oxygen implanted dose.The thre ading disloca -tion in top silicon and the pinhole density in the buried oxide layer were c haracterized by Secco and Cu -plating techniques,respective ly.The results indicate that the thr eading dislocation density in the top silicon is lower in low dose SIMOX wafers,compared with standard dose SIMOX wafers.However,the BOX layer is poor with higher pinh ole density,which can be improved by optimizing implantation parameters.