半导体量子阱中施主杂质态研究

Donor States in Semiconductor Quantum Wells

半导体量子阱的杂质离子可以位于量子阱的中心或偏离中心一定的距离d .本文用打靶法求解薛定谔方程 ,研究施主杂质的能谱随d的变化 ,发现具有相同角动量的能态具有相似的变化规律 .

Impurity ions in semiconductor quantum well can be located either at the center of the quantum well or off the center with a distance d . In this paper, a shooting method is used to solve the Schrodinger equation and the variation of the energy spectrum against d is analyzed. It is found that eigenstates with the same angular momentum show similar pattern of variation.