摘要
通过计算GaN能带结构和跃迁矩阵元 ,对GaN基量子阱激光器的极化相关增益和增益饱和特性作了理论上的计算与分析。具体计算并给出了TE和TM模的增益谱和自饱和系数的曲线 。
Based on calculation of energy structures and dipole transition matrix elements,theoretical calculation and analysis of polarization dependent optical gain and gain saturation are given for GaN quantum well lasers to investigate the characteristics of nonlinear gain.In turn,the linear spectra and self saturation spectra of TE and TM modes are given.The effect of energy structure and carrier sheet density on gain and self saturation is analyzed.
出处
《半导体光电》
CAS
CSCD
北大核心
2001年第6期411-414,共4页
Semiconductor Optoelectronics
基金
武汉市科技计划资助项目 (0 170 10 12 1)
关键词
量子阱激光器
增益饱和
极化
氮化镓
GaN
quantum well lasers
gain saturation
polarization
