ZnO陶瓷薄膜的制备及其低压压敏性质

Preparation of ZnO Ceramic Thin Films for Low-voltage Varistors

利用新型 Sol- Gel法在镀有 Au底电极的单晶硅片上制备 Bi2 O3、Sb2 O3掺杂的 Zn O陶瓷薄膜。先驱体溶液由 Bi2 O3、Sb2 O3掺杂的 Zn O纳米粉体均匀分散于含有 Zn(CH3COO) 2 、Bi(NO3) 3及 Sb2 O3的溶胶中制成。薄膜由甩胶法制备 ,并由 40 0°C预烧、75 0°C退火。制得的陶瓷薄膜 Zn O结晶良好 ,并存在β- Bi2 O3、Zn2 Sb3Bi3O1 4 及Zn7Sb2 O1 2 相 ,表现出良好的低压压敏性质。厚约为 3μm的 Zn O陶瓷薄膜非线性系数α为 6 .2、压敏电压为 5 V、漏电流为 8μA。

Zinc oxide ceramic thin films doped with bismuth oxide and antimony oxide were deposited on Au/Si substrates by a novel Sol Gel process.The precursor solution was prepared by dispersing(Bi 2O 3,Sb 2O 3) doped ZnO nano powder into the Sol,which ws prepared by dissolving zinc acetate dihydrate,bismuth nitrate,and Sb 2O 3.The thin films were deposited by spin coating,and then were heat treated at 400 °C and annealed at 750 °C,respectively.The ceramic thin films are composed of main phase of ZnO with excellent crystallization and the secondary phases of β Bi 2O 3,Zn 2Sb 3Bi 3O 14 pyrochiore and Zn 7Sb 2O 12 spinel,and show remarkable nonlinear I V characteristics at low applied voltage.The nonlinear voltage of the ZnO ceramic thin film varistors with thickness of 3 μm was about 5 V.nonlinear coefficient was 6.2,and leakage current was 8 μA.