CCD输出二极管反向漏电机理的研究

Mechanism of Inverse Current Leakage for CCD Output Diode

分析了CCD输出二极管反向漏电的机理 ,认为有三个途径造成CCD反向漏电 :n+区通过SiO2 漏电 ,n+区通过Si-SiO2 表面漏电以及体内漏电。提出了解决漏电问题的方法 ,即控制好氧化、扩散、离子注入。

The mechanism of current leakage for CCD output diode has been analysed.Three factors are considered to be the cause of CCD inverse current leakage.The first is the leakage between n + and substrate which occurs through SiO 2.The second is the leakage through Si-SiO 2 interface.The third is the leakage through internal junction.A method to reduce current leakage has been proposed,i.e.the strict control of such processes as oxidation,diffusion,ion implantation,photolithography and annealing.