摘要
为探讨脑微血管内皮细胞的电生理学特征 ,研究了脑微血管内皮细胞钾离子通道的应力反应性。 1.建立了开放式切应力作用装置并进行了切应力值的计算 ;2 .培养大鼠脑微血管内皮细胞并种植到 1cm× 1cm玻片上 ,采用 Axonpatch2 0 0 A型膜片钳放大器以及全细胞膜片钳技术记录脑微血管内皮细胞的应力敏感性钾通道。结果表明 :1.1dynes/ cm2剪切应力能激发脑微血管内皮细胞的应力敏感性钾通道 ,该通道电流与钳制电压有良好的相关性。脑血管内皮细胞膜上的各种应力反应与细胞膜上的应力敏感性钾通道相关。
This study was conducted to gain an understanding of the electrophysiologic characteristics of cerebral microvascular endothelial cells. The stress response of the potassium ion channel in cerebral microvascular endothelial cells was explored. We developed a model of the opening shear stress effect device and used it for calculation of shear stress. The cultured cerebral microvascular endothelial cells from rats were seeded on glass slide of 1 cm ×1 cm. K+ ion channel current was recorded by Patch-Clamp amplifier of Axonpatch 200A type and whole cell Patch-Clamp technique. The inward rectifier potassium current of cerebral microvessel endothelial cells has been elicited by flow stimulus of 1.1 dynes/cm2 shear stress, and there is good relationship between the current and voltage changing. The various stress responses of the cerebral vascular endothelial cells are related to the stress sensitive potassium ion channels of cellular membrane.
出处
《生物医学工程学杂志》
EI
CAS
CSCD
2001年第4期544-546,共3页
Journal of Biomedical Engineering
基金
国家卫生部基金资助项目 ( 96-1-161)