掺杂SnO_2透明导电薄膜电学及光学性能研究

Electrical and Optical Properties of Transparent and Conductive Sb-Doped SnO_2 Films

通过实验测量 ｓｏｌ－ｇｅｌ工艺制备的 Ｓｂ掺杂 ＳｎＯ２薄膜载流子浓度、迁移率、电阻率、膜厚，紫外－可见光区透射率、反射率等性质，详细研究了Ｓｂ掺杂ＳｎＯ２薄膜电学与光学性能．实验发现，薄膜具有良好的透光性和较高导电性，膜内载流子浓度高达１０２０ｃｍ－３，电阻率～１０－２Ω·ｃｍ，透光率高达 ９０％，ＳｎＯ２膜禁带宽度 Ｅｇ＝３７～３．８０ｅＶ．

Based on the measurement and analysis of carier concentration n(e), mobility mu(e) electrical resistivity rho, film thickness d, refractive index n, transmittance T(lambda) and reflectivity R(lambda) in ultraviolet-visible range, the eletrical and optical behaviours of Sb-doped SnO2 thin films derived by sol-gel processing were investigated. The experimental data show that the SnO2 thin films derived by the sol-gel processing have favourable electrical conductivity and transmittance in visible light range, in which n-type carrier concentration n(e) reachs to 10(20)cm-(3), electrical resistivity rho similar to 10(-2)Ohm(.)cm, transmittance T similar to90%, as well as forbiden band gap E-g = 3.7 similar to3.8eV.