高温硅功率器件所用硅单晶电阻率的选取

Selection of the Resistivity of Silion Monocvystalline of High-temperature Silion Power Devices

在进行高温硅功率器件设计时,为保证器件的温度特性,必须正确、恰当地选取硅单晶电阻率,理论分析与实验相结合,可根据硅功率器件额定结温确定硅单晶电阻率的上限值,根据硅功率器件反向击穿电压确定硅单晶电阻率的下限值,在此基础上,设计制造了满足坦克用的高温硅功率器件,额定结温达190℃.

When devising high-temperature silicon power devices,the resistivity of silicon monocrystalline must be properly chosen in order to ensure the devices temperature characteristics. Combined the theory with experiments,the upper limit of the resistivity of silicon monocrystalline can be determined by the silicon power devices rated junction temperature;while the lower limit can be determined by the silicon power devices backward breakdown voltage.On such a basis,the high-temperature silicon power devices for tanks have been fabricated and the rated junction temperature is 190℃.