Sol-Gel法制备PZT铁电薄膜新进展

Advances of sol-gel derivation of PZT ferroelectric thin films

从底电极的选择、过渡层的引入、外延膜的生长、取代阳离子的改性四个方面介绍了Sol Gel法制备PZT铁电薄膜的研究进展 ,简述了PZT的Sol Gel机理研究现状和引起PZT铁电薄膜极化疲劳的原因 ,分析了Sol Gel法制备PZT铁电薄膜研究中存在的问题 。

A review was made on the development of Sol Gel derivation of PZT ferroelectric thin films from four aspects, including: the change of substrate electrodes, the introduction of buffer layers, the growth of epitaxial thin films and the modification of doped cations. The research works on the mechanism of Sol Gel processed PZT and the reasons for ferroelectric polarization fatigue were also summarized. Important problems unsolved in the research of PZT thin films deposited by Sol Gel method were analyzed and the prospects of this technology were discussed.