碳掺杂β-FeSi_2薄膜的电子显微学研究

Studies of carbon doped β-FeSi_2 films by transmission electron microscopy

本文利用透射电子显微镜对离子注入合成的β FeSi2 和 β Fe(C ,Si) 2 薄膜进行了对比研究。电镜观察结果表明 ,选择C作为掺杂元素 ,能够得到界面平直、厚度均一的高质量 β相薄膜 ,晶粒得到细化 ,β FeSi2 层稳定性提高。尤其在 6 0kV、4× 10 1 7ions cm2 条件下注入直接形成非晶 ,在退火后会晶化为界面平滑、厚度均匀的 β FeSi2 薄膜。因此从微结构角度考虑 ,引入C离子有益于提高 β FeSi2

This paper investigated the microstructure of β FeSi 2 and carbon doped β Fe(C,Si) 2 films synthesized by MEVVA (metal vapor vacuum arc ion source) ion implantor by transmission electron microscopy (TEM). We demonstrated that the film quality was indeed improved as manifested by smoother β/Si interface, more homogeneous film thickness, finer grains, and higher thermal stability. When the energy and dosage are high enough (60kV and 4×10 17 ions/cm 2), amorphous layer was formed directly, which transformed into homogeneous and smooth β FeSi 2 surface films after crystallization.