单晶硅化学气相沉积反应器流场初探

Elementary Analysis on the Flow in Single-Wafer Silicon CVD Reactor

对单晶硅化学气相沉积（ＣＶＤ）反应器在沉积过程中的流场进行了初步分析．通过数值求解三维层流 Ｎａｖｉｅｒ－Ｓｔｏｋｅｓ方程，研究了反应器内浮力效应所引起的流场对称性破坏．结果表明，由于存在浮力效应，轴对称 几何体中也会发生非轴对称流场分布，从而影响单晶硅的均匀生长．

Flow pattern in single-wafer silicon CVD reactors during the process of vapour deposition is tentatively studied through the numerical solution of the 3-D laminar Navier-Stokes equations. The research indicates that Non-axisymmetric flows may occur in the axi-symmetric solid owing to buoyancy effects alone.