Si基Si_(1-x-y)Ge_xC_y合金生长中C的影响

Effects of C on the Growth of Si_(1-x-y) Ge_xC_y Alloys on Si (100) Substrates

报道了Si基Si1 x yGexCy 合金生长中C对Ge组分和生长速率的抑制作用 ,提出一个Si、Ge、C原子的排列构型 ,从理论上给出了C对Ge组分的抑制度和Ge/C原子比的关系 ,并指出在富Ge情况下C对Ge的抑制作用会趋向于饱和。

The suppressive effects of C in the growth of Ge-rich Si 1-x-y Ge xC y alloys on Si (100) substrates. On Ge content and growth rate of the alloys are reported first. A possible mechanism for the suppressive effects is proposed. After the calculations of atomic configuration based on a reasonable hypothesis, the dependence of the suppression degree on Ge/C atom ratio was obtained. A tendency for the suppressive effect to the full extent will apear with increasing Ge concentration in the growth of Si 1-x-y Ge xC y alloys.