金属-铁电体-GaN结构研究

Metal-Ferroelectric-GaN Structures

以铁电体 Pb(Zr0 .53Ti0 .4 7) O3取代传统绝缘栅氧化物制备了 Ga N基金属 -绝缘层 -半导体 (MIS)结构 .由于铁电体具有较强的极化电场和高介电常数 ,Ga N基金属 -铁电体 -半导体 (MFS)结构的电容 -电压特性与其他 Ga N基MIS结构相比较得到了显著的提高 .Ga N基 MFS结构中 Ga N激活层达到反型时的偏压小于 5 V ,这和硅基电子器件和集成电路的工作电压一致 ,而且结果表明 Ga N层的载流子浓度比其背景载流子浓度减小了一个数量级 .因此 ,Ga N基 MFS结构对于 Ga

A GaN based metal insulator semiconductor (MIS) structure is fabricated by using ferroelectric Pb(Zr 0.53 Ti 0.47 )O 3 (PZT) instead of conventional oxides as insulator gate.Because of the polarization field provided by ferroelectric and the high dielectric constant of ferroelectric insulator,the capacitance voltage ( C V ) characteristics of GaN based metal ferroelectric semiconductor (MFS) structures are markedly improved compared with that of the previously studied GaN MIS structures.The GaN active layer in MFS structures can reach inversion at the bias below 5V,which is the applied voltage used in silicon based integrated circuits.The surface carrier concentration of GaN layer in the MFS structure is decreased by one order compared with the background carrier concentration.The GaN MFS structures are promising for the practical application of GaN based field effect transistors.