钝化多孔硅的光致发光

Photoluminescence from Passivation Porous Silicon

选用含有胺基的正丁胺 (CH3CH2 CH2 CH2 - NH2 )作碳源 ,采用射频辉光放电法制备碳膜对多孔硅进行碳膜钝化 ,其光致发光谱和存放实验表明 :正丁胺对多孔硅进行钝化是一种十分有效的多孔硅后处理途径 .研究了钝化多孔硅的光致发光谱随钝化温度和钝化时间的变化关系 ,其结果显示

By using n butylamine as carbon resource,a layer of carbon film is covered on the porous silicon (PS) surface by means of radio frequency glow discharge.Raman spectrum of the carbon film indicate that there are amino groups and hydrogen atoms in the carbon film.IR spectrum exhibits that the surface of the passivated sample is mainly covered with Si-C?Si-N and Si-O.PL spectra of the passivated sample and of the passivated sample after storing in atmosphere show that carbon films can be an excellent passivation films on porous silicon and may be good to the practical application.While changing passivated temperature and passivated time,PL of the passivated samples show an obvious change.The enhancement of PL intensity of the passivated samples is due to the existence of Si-C.Si-N and Si-O on the PS surface simultaneously,and blueshift of PL peaks is attributed to amino groups and hydrogen atoms and the size reduction of the silicon nanocrystallites.These results indicate that the highest light emitting efficiency and the wavelength required can be acquired by changing passivation temperature and passivation time.