单晶硅中氢与辐照缺陷的相互作用

Reaction of Hydrogen with Neutron-Irradiation-Induced Defects in Crystalline Silicon

对 NTD氢区熔单晶硅进行了不同温度下等时退火 ,采用 Hall电学方法测量了电阻率、迁移率随退火温度的变化规律 .利用红外吸收技术测量了单晶硅氢区熔退火前后及 NTD氢区熔单晶硅不同退火温度下与氢、辐照缺陷有关的红外振动吸收峰变化 ,对辐照缺陷的退火行为进行了探讨 .实验证实 NTD氢区熔单晶硅在 15 0～ 6 5 0℃范围内等时退火具有显著特点 :在 5 0 0℃下退火 ,出现电阻率极小值 ,即出现浓度很高的过量浅施主 ;P型向 N型转变温度为 4 0 0℃ ,迁移率恢复温度为 5 0 0℃ ,载流子恢复温度为 6 0 0℃ ,均明显低于 NTD氩区熔单晶硅转型温度及迁移率和载流子恢复温度 。

Isochronal thermal annealing behavior of NTD floating zone silicon grown in the hydrogen ambient (called NTD FZ(H) Si) is reported.The dependencies of resistivity and carrier mobility on the annealing temperature are determined by room temperature Hall electrical measurements.Using infrared absorption method,the hydrogen related infrared absorption peaks evolution for pre and post hydrogen annealing treatment of FZ and CZ silicon,and for NTD FZ(H) Si are measured in detail.The reaction kinetics among hydrogen,irradiated defects and other impurities in the different isochronal annealing temperature range are analyzed preliminarily.It is demonstrated that compared with NTD FZ(Ar) Si,NTD FZ(H) Si exhibit the obvious features upon isochronal annealing in the temperature range of 150～650℃:(a)There appears a maximum of resisitivity at the annealing temperature of 500℃ indicating an excessive shallow donor formed;(b)The conduction transition from P to N type appeares at 400℃,and the restoring temperatures of carrier mobility and carrier are at 500℃ and 600℃ respectively,all lower than those for NTD FZ(Ar)Si.It is directly relative to the reaction of hydrogen and irradiation induced defects.