采用As_2和As_4模式的新型全固源InAsP分子束外延生长

Solid Source Molecular Beam Epitaxy Growth of InAsP Using As_2 and As_4 Modes

在国产分子束外延设备的基础上 ,利用新型阀控裂解 As源炉 ,对 As2 和 As4 的生长特性进行了全面的研究 .以 As2 和 As4 两种模式 ,在 (0 0 1) In P衬底上生长了高质量的 In As P体材料和 In Asy P1 - y/ In P多量子阱样品 .材料质量用 X射线衍射 (XRD)以及室温和低温的光致发光 (PL)测定 .实验发现 ,两种模式生长的样品的晶体结构质量相当 ,但 As2 的吸附系数明显大于 As4 的吸附系数 .另外 ,用 As2 模式生长的多量子阱样品的室温光学特性优于As4 模式生长的样品 ,但在低温时 ,二者几乎相同 ,这是由 As4

Growth properties of As 2 and As 4 mode based upon a home made MBE system are reported.High quality InAsP bulk film and InAs y P 1-y /InP quantum wells are grown on (001) InP substrate under As 2 and As 4 modes,respectively.X ray diffraction (XRD) measurements and simulations reveal the high structural quality of the samples grown under both As 2 and As 4 modes,while the adsorption efficiency of As 2 is found to be higher than that of As 4.The optical properties of samples are measured by room temperature and 10K photoluminescence (PL).The room temperature PL properties of samples grown using As 2 mode in the whole composition range are obviously improved compared with the samples grown using As 4 mode,but the 10K PL properties are comparable.The difference is attributed to the different quantity of defects introduced into the epilayers during the growth because of the relatively complicated growth mechanism of As 4 mode.