摘要
采用分子束外延方法在砷化镓衬底上生长了双垒单阱结构 ,然后用常规半导体器件工艺制成了谐振隧穿二极管 (RTD) ,有相当好的 I- V特性 .对于 5μm× 5μm的 RTD器件 ,在室温条件下 ,测得其峰谷比最大可到 7.6∶ 1,最高振荡频率大于 2 6
The resonant tunneling diodes are fabricated with the conventional semiconductor device technology.The double barrier single quantum well is grown on GaAs substrate by molecular beam epitaxy.For the size of 5μm×5μm,the devices show excellent I V characteristics with peak to valley current ratios as high as 7 6∶1 at 300K.Its maximum oscillation frequency is more than 26GHz.
