低剂量率下MOS器件的辐照效应

Radiation Effects of MOS Devices at Low Dose Rate

对 MOS器件在低剂量率 γ射线辐射条件下的偏置效应进行了研究。对不同偏置及退火条件下 MOS器件辐照后的阈值电压漂移进行了对比。结果表明 ,偏置在 MOS器件栅氧化层内产生电场 ,增强了辐照产生电子 -空穴对的分离 ,同时 ,影响了正电荷 (包括空穴和氢离子 )的运动状态 ;此外 ,偏置对退火同样有促进作用。

Effects of irradiation dose rates and irradiation bias are investigated for MOS devices under γ-rays. Threshold voltage shift is compared after the MOS device is irradiated under different irradiation temperature, gate bias and annealing conditions. The electric field in gate oxide due to gate bias not only accelerates the separation of electron-hole, but also influences the movement of positive charges,including hole and H +.In addition,the gate bias is helpful for improving annealing.