微波退火法低温制备多晶硅薄膜晶体管

Fabrication of Polycrystalline Silicon Thin Film Transistor by Microwave Annealing at Low Temperature

多晶硅薄膜晶体管以其独特的优点在液晶显示领域中有着重要位置。为了满足在普通玻璃衬底上制备多晶硅薄膜晶体管有源矩阵液晶显示器 ,低温制备 (小于 60 0°C)高质量多晶硅薄膜已成为研究热点。文章利用微波加热技术 ,采用非晶硅薄膜微波退火固相晶化法低温制备出多晶硅薄膜晶体管 ,研究了微波退火工艺对多晶硅薄膜晶体管电学性能的影响。

Polycrystalline silicon thin film transistor has played a dominant role in the area of liquid display.Preparation of polycrystalline silicon thin film with high quality at low temperature(<600 °C)has been recently become one of the hot spots in order to meet the requirement of polycrystalline silicon thin film transistors in the active matrix liquid crystal display on the substrate of common glassThe microwave heating process was utilized for preparing polycrystalline silicon thin film transistor at low temperature by microwave-induced solid phase crystallization of amorphous silicon thin filmThe influence of microwave annealing process on the electrical performance of polycrystalline silicon thin film transistor has been studied