Origin of Photoluminescence of Neodymium-Implanted Silicon

钕离子注入单晶硅光致发光的起源(英文)

Neodymium is incorporated into single crystalline silicon on MEVVA (Metal Vapor Vacuum Arc) ion source.At room temperature,strong ultra violet and visible fluorescence are observed at the excitation wavelength of 220nm.Luminescence intensity increases with the increase of ion fluence.XPS results manifest that Si-O,Nd-O,Si-Si and O-O bonds exist in the implanted layers.Luminescence mainly results from the radiation transition in the intra 4f shell of Nd 3+ ion.The defects' and damages' contribution to the luminescence is also presented.

Nd离子注入到 (111)单晶硅中形成钕掺杂层 ,室温下 ,紫外光 (2 2 0 nm )激发得到了钕掺杂层的蓝紫光的光致发光谱 ,且发光强度随离子注入的剂量增大而增强 .X射线光电子能谱分析表明掺杂层存在 Si— O,Nd— O,Si— Si和 O— O键 .发光主要是由于 Nd3+ 的 4f内层电子的辐射跃迁所致 ,同时 。