摘要
采用能量 2 Ge V、剂量 10 1 0— 10 1 3cm- 2的 Ar+辐照 P型 Cd0 .96 Zn0 .0 4Te材料 ,对辐照前后和不同辐照剂量的样品进行了电学测试和光致发光研究 .实验结果和分析表明 ,Ar+ 辐照在 Cd0 .96 Zn0 .0 4Te中产生了更大密度的受主型缺陷和散射中心 ,引起材料载流子 (空穴 )浓度的增大和迁移率的降低 .随着辐照剂量的增大 ,载流子迁移率的降低要比载流子浓度增大得快 。
Ar + with energy of 2GeV and fluences of 10 10 -10 13 cm -2 are used to irradiate P Cd 0.96 Zn 0.04 Te.The measurement of electrical properties and photoluminescence is carried out on the samples,which are nonirradiated and exposed to various ion flences,respectively.The densities of the acceptor type defects and scattering centers are elevated after the irradiation,which result in the increase in the carrier (hole) concentration and decrease in carrier mobility,respectively.With the ion fluence increasing,the carrier mobility decreases faster than carrier concentration increases.Therefore,the material resistance increases greatly.
基金
国防预研基金(批准号 :11.3.2 )
国家自然科学基金(批准号 :1980 5 0 14 )资助项目~~
