摘要
通过常温下压痕之后的高温热处理实验 ,研究了掺氮直拉硅单晶 (NCZSi)中氮杂质对位错滑移的钉扎作用 ,以及塑性变形能在热处理过程中通过位错的滑移释放的机理 .实验结果表明氮杂质对位错有着较强的钉扎作用 ,使掺氮直拉硅单晶中的位错在同一温度下热处理时的滑移距离均小于普通直拉硅单晶 (CZSi) .同时指出 ,NCZSi的位错激活能比 CZSi的要高 ,NCZSi中塑性变形能通过位错滑移释放较 CZSi快 。
After forming indentation at room temperature and annealing at high temperatures,the pinning effect of nitrogen on dislocations and the releasing mechanism of the plastic deformation energy are studied.The experimental results show that nitrogen can pin the dislocations efficiently.The dislocations in nitrogen doped Czochraliki silicon (NCZSi) move less than that in usual silicon (CZSi).The results indicate that the active energy of dislocations in NCZSi is higher than that in CZSi.Therefore,the plastic energy in NCZSi releases more quickly than that in CZSi.The possible mechanism of the plastic deformation energy release is also discussed.
关键词
单晶硅
位错
氮杂质
半导体材料
single crystal silicon
dislocations
nitrogen
