摘要
基于pin结构a Si∶H太阳能电池中的空间电荷效应 ,讨论a Si/CIS叠层太阳能电池的稳定性。结果表明 ,光生空穴俘获造成的a Si∶H中正空间电荷密度增加改变了电池内部的电场分布 ,普遍抬高a Si∶H薄膜中电场强度。在光照射下 ,空间电荷效应不会给a Si/CIS叠层结构中的a Si∶H薄膜带来准中性区 (低场“死层”) ,因而没有发生a Si/CIS叠层太阳能电池顶电池 (p i na Si∶H)的光诱导性能衰退 ,a Si/CIS叠层结构太阳能电池具有较高的光稳定性。
The stability of a Si/CIS tandem solar cells was studied on the basis of space charge effect.The results show that the increase of positive space charge density,resulted from photo generated hole trapping,considerably changes the internal electric field distribution and raises the electric field strength throughout the a Si∶H film.The stability of a Si/CIS tandem solar cells can be very high because under illumination,the space charge effect fails to create a quasi neutral region(low field'dead layer'),and consequently,no light induced degradation in the top cell(p i n a Si∶H)of a Si/CIS tantem solar cells can occur.
出处
《真空科学与技术》
CSCD
北大核心
2002年第1期33-36,共4页
Vacuum Science and Technology
基金
国家自然科学基金资助项目 (No .698760 2 4)
