摘要
以Zn(C2 H5) 2 和CO2 为反应源 ,在低温下用等离子体增强化学气相沉积方法 ,在Si衬底上外延生长了高质量的ZnO薄膜。用X射线衍射谱和光致发光谱研究了衬底温度对ZnO薄膜质量的影响。X射线衍射结果表明 ,在生长温度为2 3 0℃时制备出了高质量 ( 0 0 0 2 )择优取向的ZnO薄膜 ,其半高宽为 0 2 6°。光致发光谱显示出强的紫外自由激子发射与微弱的与氧空位相关的深缺陷发光 。
High quality ZnO thin films have been prepared on Si(100) substrate by plasma enhanced chemical vapor deposition with Zn(C 2H 5) 2 and CO 2 as the reactant sources at a low temperature.The dependence of the quality of ZnO thin film on the growth temperature was studied.A high quality ZnO thin film with a c axis orientated wurtizte structure was obtained at the growth temperature of 230℃.X ray diffraction shows that the full width at half maximum (FWHM) of (0002) ZnO,located at 34 42°,is about 0 26°,indicating a high quality ZnO film.The photoluminescence spectra (PL) show a strong excitonic emission around 380 nm with a weak emission around 520 nm related to deep level defects,implying that ZnO thin films are nearly stoichiometric.The FWHMs of the PL spectra become narrower with the increase of the growth temperature.
出处
《真空科学与技术》
CSCD
北大核心
2002年第1期81-84,共4页
Vacuum Science and Technology
