摘要
本文介绍了透射式 Ga As光电阴极 Al Ga As窗层和 Ga As光电发射外延层内应力的种类及其表征方法和测量方法 。
The stresses overall epitaxial wafer can be represented by the curvature radius of the wafer,furthermore the curvature radius of curved wafer can be measured by X-ray diffraction.This paper described the varieties,the presetation and measuring method of stresses on AlGaAs/GaAs epitaxial layer.Besides experimental data and analysing results were given in this paper .
出处
《光子学报》
EI
CAS
CSCD
北大核心
2002年第1期88-92,共5页
Acta Photonica Sinica