SiC MESFET的大信号电容解析模型

An Analytical Large-Signal Capacitance Model for SiC MESFET

考虑 4H SiC常温下不完全离化和高饱和电子漂移速度的特点 ,采用载流子速度饱和理论和电荷控制理论 ,结合双曲正切函数的描述方法 ,导出了适用于 4H SiCMESFET在射频功率应用时的大信号电容解析模型 ,其模拟结果与实验值有很好的一致性 .该模型具有物理概念清晰且算法简单的优点 。

According to the properties of impurities with incomplete ionization and high saturated electron drift velocity in silicon carbide,a quasi analytical large signal capacitance model of 4H SiC MESFET for RF power applications is proposed utilizing the charge controlling theory and carrier velocity saturation theory,combined with description of hyperbolic tangent function.The comparison between simulations and measurements shows a good agreement.The model is simple in calculations and distinct in physical mechanism,therefore suitable for design of microwave devices and circuits.