热载流子诱生MOSFET/SOI界面陷阱的正向栅控二极管技术表征

Hot Carrier-Induced Interface Traps in N-Channel MOSFET/SOI Characterized by a Forward Gated Diode Technique

本文完成了热载流子诱生MOSFET/SOI界面陷阱正向栅控二极管技术表征的实验研究 .正向栅控二极管技术简单、准确 ,可以直接测得热载流子诱生的平均界面陷阱密度 ,从而表征器件的抗热载流子特性 .实验结果表明 :通过体接触方式测得的MOSFET/SOI栅控二极管R G电流峰可以直接给出诱生的界面陷阱密度 .抽取出来的热载流子诱生界面陷阱密度与累积应力时间呈幂指数关系 ,指数因子约为 0

This paper describes the characterization of the hot carrier induced interface traps by a forward gated diode measurement in an N channel MOSFET/SOI.The experimental results achieved by this method show that the R G current peak can directly give stress induced average interface trap density so to characterize the device′s hot carrier degradation behavior and evaluate the quality of SOI wafer.As expected,a power law of Δ N it ～t 0 787 between the stress induced interface trap density and accumulated stressed time has been obtained.