半导体激光促进氟化钠预防牙本质龋的研究

The enhancement of the prevention of artificial dentin caries of NaF using GaAlAs laser irridiation

目的 为寻找更有效的预防牙本质龋的手段 ,应用半导体激光 (激光参数 :在输出功率为 13 0mw下连续辐照 2分钟 ,能量密度为 4 0G/cm2 )与 2 %氟化钠 (NaF) (涂 2分钟 )溶液联合作用于离体人牙根表面来预防牙本质龋。方法 所制标本分为 4组 ,分别经激光加氟、氟、激光和空白处理 ,然后同时进行人工龋实验 ,制备磨片 ,照射软X射线片 ,用TMR软件 (Transversemicroradiography)对所拍X线片的表面层宽度、表面下层宽度及其相对脱矿量进行分析、统计。结果 激光加氟组人工龋的表面下层宽度及其相对脱矿量较单纯涂氟组、单纯激光组、空白组显著减少 (P <0 .0 5 ) ,单纯氟组人工龋的表面下层宽度及其相对脱矿量较单纯激光组、空白组显著减少 (P<0 .0 5 ) ,单纯激光组表面下层宽度及其相对脱矿量与空白组之间无显著性差异 (P >0 .0 5 ) ,各组表面层之间无显著性差异 (P >0 .0 5 )。结论 半导体激光能促进氟化钠的抗酸效果 ,这可能为临床提供一种预防牙本质龋的新方法。

Objective To investigate a new method for clinical prevention of dentin caries.Methods Sixteen premolar teeth extracted for orthodontic purpose were divided into four groups whose windows were prepared on every root(the cementum was removed).They were applied with 2%NaF(2min) after laser irradiaton(P=130mw,T=2min,E=40J/cm 2),2%NaF(2min) alone,laser alone and control,and then put into the cariogenic fluid for 96 hours to induce dentin caries.The lesion of every group in microradiography was examined and analysed by transverse microradiography.Results The result showed that the leasion depth and mineral loss of the group treated by combination laser and NaF was significantly smaller than the one treated by NaF alone,or by laser alone and control(P< 0.05 ),and the lesion depth and mineral loss of the one treated by NaF alone was significantly smaller than the one treated by laser alone and control(P< 0.05 ),but there was no difference in the lesion depth and mineral loss between the one treated by control alone and laser alone.Conclusion GaAlAs laser irridiation can enhance the prevention of artificial dentin caries of NaF.