摘要
以溶液硅源和表面硅源两种合成路线在SiO2颗粒表面进行了MCM-41的原位合成,结果发现以两种方式均可得到MCM-41的有序结构。溶液硅源原位合成MCM-41的长程结构较好,两种硅源原位合成的MCM-41均能够在脱除模板剂过程中保持其长程有序结构。表面硅源原位合成MCM-41的孔径分布较窄,最可几孔径为3.81nm。本文还考察了OH/CTABr及SiO2/OH比对表面硅源原位合成MCM-41长程结构特征的影响。
MCM-41 has been synthesized in-situ on silica both using solution silicate and surface silicate as Si sources. The long-range structure of MCM-41 synthesized with solution silicate as Si source is better than that of MCM-41 with surface silicate as Si source, while either is as stable as to preserve the long-range ordered structure during calcination. For the MCM-41 sample synthesized with surface silicate as Si source, the pore diameters are narrowly distributed with approximately 3.81nm in the maximum distribution.
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2002年第2期161-165,共5页
Chinese Journal of Inorganic Chemistry
基金
国家自然科学基金资助项目(No.29973004)
