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K(TCNQ)薄膜的制备及其电双稳特性 被引量:6

Preparation and Electrical Bistable Property of K(TCNQ) Thin Film
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摘要 在真空环境下 ,首次利用固态化学置换反应制备了K(TCNQ)薄膜 ,其分子结构与已报道过的K(TCNQ)单晶、多晶相同。但不同的是 ,在 30 0K以上 ,K(TCNQ)薄膜具有可逆的双稳特性。 The K(TCNQ) thin film was prepared by a method of solid chemical replacement reaction in vacuum. The molecular structure obtained in the film is the same as that in K(TCNQ) single crystal and polycrystalline solids. The film shows electric bistable behavior above 300 K, which is different from single crystal of K(TCNQ). It is expected that this material will be applied to fabricate photoelectric switch and in electric information storage.
出处 《真空科学与技术》 EI CSCD 北大核心 2001年第5期364-367,共4页 Vacuum Science and Technology
关键词 固态化学置换反应 K(TCNQ)薄膜 电双稳特性 电荷转移络合物 7 7 8 8-四氰基苯酯二甲烷 Chemical reactions Electric properties Single crystals
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参考文献12

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同被引文献24

  • 1叶春暖,范智勇,杨剑,姚彦,莫晓亮,徐华华,楼成飞,曹冠英,孙大林,卢嘉,陈国荣.Ag(TCNQ)纳米晶须的生长机理[J].真空科学与技术学报,2004,24(2):129-132. 被引量:4
  • 2万明芳,魏希文,李建军,邹赫麟,袁凯华,何宇亮.纳米硅薄膜表面形貌分形特征的STM研究[J].Journal of Semiconductors,1995,16(12):917-920. 被引量:2
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  • 4郭文阁,郑建邦,任驹,张延曹.基于宽带隙P-I-N结构的高效有机小分子太阳电池[J].太阳能学报,2006,27(6):530-534. 被引量:3
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  • 6Takeo Minari,Tetsuhiko Miyadera,Kazuhito Tsukagoshi,Yoshinobu Aoyagi,Hiromi Ito.Charge injection process in organic field-effect transistors. Applied Physics . 2007
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