摘要
在真空环境下 ,首次利用固态化学置换反应制备了K(TCNQ)薄膜 ,其分子结构与已报道过的K(TCNQ)单晶、多晶相同。但不同的是 ,在 30 0K以上 ,K(TCNQ)薄膜具有可逆的双稳特性。
The K(TCNQ) thin film was prepared by a method of solid chemical replacement reaction in vacuum. The molecular structure obtained in the film is the same as that in K(TCNQ) single crystal and polycrystalline solids. The film shows electric bistable behavior above 300 K, which is different from single crystal of K(TCNQ). It is expected that this material will be applied to fabricate photoelectric switch and in electric information storage.
出处
《真空科学与技术》
EI
CSCD
北大核心
2001年第5期364-367,共4页
Vacuum Science and Technology