摘要
基于辉光放电原理在不同的溅射气压下制备的NiFe薄膜 ,发现较低溅射气压下比较高溅射气压下制备的NiFe薄膜的磁性能要好得多。较低溅射气压下制备的NiFe(12nm)薄膜 ,各向异性磁电阻 (AMR)值达到 1 2 % ,而其矫顽力却只有12 7 4A/m。结构分析表明 :较低溅射气压下制备的NiFe薄膜结构缺陷较少 ,内应力小 ;而较高溅射气压下制备的NiFe薄膜结构缺陷较多 。
NiFe thin films were grown by glow discharge under different pressures.We found that the vacuum pressure significantly affects the magnetic properties of the films;the lower the pressure,the better the magnetic properties.For instance,the coercivities of the NiFe films,grown at 1×10 -4 Pa and 1×10 -1 Pa,are 127 4 A/m(AMR=1 2%),and 636 8 A/m,respectively.The structural analysis showed that the low film growth pressure results in fewer defects and much weaker stress than the high pressure growth does.
出处
《真空科学与技术》
CSCD
北大核心
2001年第5期419-422,共4页
Vacuum Science and Technology
基金
国家自然科学基金重大项目 (19890 3 10 )