摘要
热丝法化学气相沉积金刚石薄膜系统内 ,衬底温度和碳源气体浓度是金刚石薄膜生长最为重要的参数。本文根据传热学基本原理 ,数值模拟了衬底表面辐照度、温度分布 ,讨论了衬底热传导等因素对衬底温度分布的影响 ,探讨了如何改善衬底温度均匀性。结果表明 ,考虑衬底横向热传导后 ,衬底表面温度分布均匀性明显优于基于辐射热平衡得到的温度分布 ,在一定程度上有利于生长大面积薄膜。
Hot-filament chemical vapor deposition is a common method used for diamond film growth. Substrate temperature profiles and concentration of carbon source are the main deposition parameters in a HFCVD system. Numerical simulations were made for radiation, substrate temperature with and without lateral heat conduction in the substrate. The results showed that the temperature field without considering lateral heat conduction is of poor uniformity. When calculation was done with lateral heat conduction, the max temperature was changed from 863K to 711K, while the min temperature from 469K to 639K. It can be concluded that lateral heat conduction increases the uniformity of the substrate surface temperature, which is beneficial for large-area growth of diamond films.
出处
《材料科学与工程》
CSCD
北大核心
2001年第3期29-33,共5页
Materials Science and Engineering
基金
国家自然科学基金资助项目 ( 5 99760 38)
