摘要
采用正电子湮没寿命谱方法 ,对 1 .6× 1 0 1 6 cm- 2注量的 85 Me V1 9F离子辐照 P型 In P单晶的微观缺陷进行了研究 ,在 3 0 0～ 1 0 2 3 K的温度范围内测量了正电子湮没寿命随退火温度的变化 .实验表明 :辐射在 In P中产生单空位缺陷 ,在退火过程中单空位相互聚合形成双空位 .单空位和双空位分别在 5 73 K和 72 3
The positron annihilation lifetime measurements have been performed to study the defects in P type InP irradiated by 85 MeV 19 F ions at the fluence of 1.6×10 16 cm\+ -2 as a function of annealing temperature from 300～1 023 K. The results show that the mono vacancies are created in the irradiated InP and they are converted to di vacancies by combination during annealing. The mono and di vacancies are annealed at 573 K, 723 K respectively.
