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NPT型IGBT静态模型分析及仿真

The Analysis and Simulation of the Static-state Model of NPT-IGBT
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摘要 对非穿通型绝缘栅双极晶体管 (NPT IGBT)的静态工作特性进行了理论分析。从IGBT结构入手 ,把它看作MOSFET驱动的BJT ,从其包含的BJT和MOSFET分别讨论。并且对比了传统BJT模型和IGBT中包含的BJT模型的分析方法 ,详细讨论了用双极传输方程分析BJT模型。在MATLAB的仿真环境中添加相应的模型描述语言S function ,实现静态特性 。 An analytical static-steady model for NPT-IGBT is described in this paper in detail.From its struction,IGBT is a BJT drived by a MOSFET,discussed the contained BJT and MOSFET respectively.Comparing with the traditional model and the contained BJT in IGBT model,so the ambipolar theory is used to analysis the steady-state characteristics,And rewrite the model in the term of model describing language-S function,provided the precondition of dynamic simulation.
机构地区 湖北工学院
出处 《电工技术杂志》 2001年第11期4-7,共4页 Electrotechnical Journal
关键词 非穿通型绝缘栅双极晶体管 静态模型 双极传输方程 仿真 NPT型 IGBT NPT-IGBT static-steady model amipolar transport model describing language
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参考文献4

  • 1[1]Hefner A R. Analytical Modeling of Device - circuit Interactions for Power Insulated Gated Bipolar Transistor (IGBT). IEEE Transation on Industry Applications, 1994,26(6) :995~1005
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  • 4王晓宝.NPT型IGBT的技术特点[J].电力电子技术,2000,34(6):55-57. 被引量:1

二级参考文献1

  • 1[1]1.Pendharkar et al.Electrothermal Simulations in Punchthrough and Nonpunchthrough IGBT's.IEEE 1998,45(10):2222~2231.

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